Room Temperature Operation of Donor-Based Atomically Precise Devices
ORAL
Abstract
Atomic precision (AP) electrical devices, fabricated using hydrogen depassivation lithography in a scanning tunneling microscope, offer a way to explore device physics with atomic control. However, these devices are isolated through freezing out leakage pathways at cryogenic temperatures and cannot function at room temperature (RT), making them incompatible with metal-oxide semiconductor (MOS) technologies. To address this, we have developed a MOS compatible counter-doping scheme, providing significant leakage current isolation. RT electrical measurements on AP devices demonstrate electrical properties on par with devices measured at low temperatures, aligning with electrical properties extracted from RT spectroscopic ellipsometry. This demonstration of a MOS doping scheme enabling RT operation enables the integration of AP devices with MOS technology.
*This work was supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.
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Presenters
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Jeffrey Ivie
- Sandia National Laboratories