Tunability and thickness dependence of in-plane magnetoresistance and Hall effect in thin films of elemental Bismuth
ORAL
Abstract
Observations of negative longitudinal magnetoresistance (NLMR), anisotropic magnetoresistance (AMR), and the planar Hall effect (PHE) under an in-plane magnetic field are often used as indications of non-trivial topology in non-magnetic material systems. We show NLMR, AMR, and PHE in crystalline epitaxial thin films (< 50 nm) of elemental Bismuth (111) grown by molecular beam epitaxy on intrinsic GaAs (111) substrates. Films were characterized in-situ using scanning tunneling microscopy to confirm topography and density of states. Furthermore, the thickness and temperature dependence of these phenomena are investigated, demonstrating a high degree of tunability. These effects appear robust to contact geometry and addition of a Germanium buffer layer.
*All work at Argonne was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The use of facilities at the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Basic Energy Sciences under contract No. DEAC02-06CH11357.
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Presenters
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Eugene Ark
- Materials Science Division, Argonne National Laboratory