Growth of the Transparent Correlated Metal SrVO<sub>3</sub>
ORAL
Abstract
<div style="direction: ltr;">The ongoing search for earth-abundant transparent conducting oxides (TCOs) has spread across a wide variety of research fields, highlighting the correlated metal SrVO3 as a potential candidate. SrVO3 exhibits high conductivity and transparency in the visible. Moreover, SrVO3 is an attractive candidate for future electronics. A major hurdle for the synthesis of high quality SrVO3 is to mitigate the formation of defects throughout the thin film. These defects can cause electron scattering and result in high resistivity and obscure some of the interesting physics. Film growth was done with molecular beam epitaxy (MBE), providing a scalable and industry-compatible fabrication process. In this work we present low defect SrVO3 films with residual resistivity ratios exceeding 15 and room temperature resistivities in the order of 30 µΩ cm. Careful analysis of the structural and electronic properties of the SrVO3 films paves the way towards further improvement of their quality and their implementation as TCO in optoelectronics and renewable energy devices.</div>
*<div style="direction: ltr;">This work was funded by the Israeli Science Foundation (ISF Grant 375/17)</div>
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Presenters
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Lishai Shoham
- Technion - Israel Institute of Technology