Structure-property relationship of epitaxial Van der Waals interface

ORAL

Abstract

Revealing and exploiting novel electronic properties in atomically thin 2D materials such as graphene and transition metal dichalcogenides have progressed dramatically in recent years. A challenge is to correlate structure and electronic properties, especially in heterostructures. Here, we focus on a prototypical Van der Waals hetero-interface of graphene and monolayer WSe2, where both are prepared epitaxially on a SiC substrate. We present angle-resolved photoelectron spectroscopy (ARPES) and synchrotron X-ray diffraction studies, which show that WSe2 is compressed by exactly the amount needed to realize a perfect epitaxial matching to the graphene lattice. Combined APRES and XPS directly reveal electron transfer from graphene to WSe2.

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Presenters

  • Hiroyuki Nakamura

    • University of Arkansas

Authors

  • Hiroyuki Nakamura

    • University of Arkansas

  • Philipp Rosenzweig

    • Max Planck Institute for Solid State Research

  • Avaise Mohammed

    • Max Planck Institute for Solid State Research

  • Kathrin Küster

    • Max Planck Institute for Solid State Research, Stuttgart, Germany
    • Max Planck Institute for Solid State Research

  • Peter Wochner

    • Max Planck Institute for Solid State Research

  • Ulrich Wedig

    • Max Planck Institute for Solid State Research

  • Hadeel Hussain

    • Diamond Light Sorce

  • Jonathan Rawle

    • Diamond Light Sorce

  • Chris Nicklin

    • Diamond Light Sorce

  • Hidenori Takagi

    • University of Tokyo (Japan)
    • Max Planck Institute for Solid State Research
    • Max Planck Institute for Solid State Research, Stuttgart, Germany

  • Ulrich Starke

    • Max Planck Institute for Solid State Research