Strontium Stannate as an Ultra-Wide Bandgap Semiconductor
ORAL
Abstract
The development of superior ultra-wide bandgap (UWBG) semiconductors is crucial for next-generation high-power devices. This talk establishes SrSnO3 (SSO) as an outstanding UWBG semiconductor. We show SSO thin-film growth with controlled doping and present detailed transport measurements supplemented by first-principles calculations of e-ph interactions and charge transport. We discuss details of the MBE growth, strain relaxation and electronic transport properties as a function of temperature, chemical doping and strain. Our results shed light on the transport behavior and mobility-limiting mechanisms in SSO, and demonstrate that Nd-doped SSO films achieve the best of both worlds – carrier densities as high as 2 × 1020 cm-3 together with a high room temperature mobility of ~70 cm2V-1s-1. These figures of merit place perovskite oxides, for the first time, on par with well-established UWBG semiconductors.
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Presenters
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Tristan Truttmann
- Department of Chemical Engineering and Materials Science, University of Minnesota
- University of Minnesota