Demonstration of JMRAM arrays
· Invited
Abstract
Superconducting circuits are under development as a solution to the demand for ultralow power computers. Logic technologies based in superconducting materials, such as Reciprocal Quantum Logic (RQL) require the development of a superconducting memory in order to build complex computers. Josephson Magnetic Random Access Memory (JMRAM) is a non-volatile memory utilizing the 0-π phase characteristics of pseudo-spin valve magnetic barrier Josephson junctions as a phase element within more traditional superconductor-insulator-superconductor (SIS) SQUIDs, which are used to read the phase state. Here, we present a demonstration of JMRAM from a single unit cell to 2x2 and 8x8 arrays. All arrays are built based on Ni/Cu/NiFe pseudo-spin valve junctions with 50-100 Oe switching field and high critical current of 0.5 mA. All array elements were functional with 100% switching between 0 and 1 state using external magnetic fields. This foundational demonstration serves as the basis for a more complete assessment of the progress of this technology toward practical implementation.
*This research is based upon work supported by the ODNI, IARPA, via ARO contract number W911NF-14-C-0115. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the ODNI, IARPA, or the U.S. Government.
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Presenters
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Donald Miller
- Northrop Grumman - Mission Systems