Strain induced Kramers-Weyl Fermions

ORAL

Abstract

Kramers-Weyl fermions are recently found to be widely supported in chiral crystals and exhibit many novel properties. However, in achiral crystals due to the presence of mirror or roto-inversion symmetries, Kramers Weyl fermions are often obscured to emerge due to the presence of nodal lines. In this work, we show Kramers-Weyl fermions are easily generated by removing the degeneracy of these nodal lines through strain effects. Remarkably, based on realistic DFT calculations, in the strained Rashba semiconductor BiTeI, we find a single Kramers-Weyl fermion near Fermi energy. Moreover, a strain induced quantized circular photogalvanic effect (CPGE) is further established. Our work paves a way to study the topology, optoelectronics by the tuning the chirality of crystals.

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Presenters

  • Jinxin Hu

    • Physics, Hong Kong University of Science and Technology

Authors

  • Jinxin Hu

    • Physics, Hong Kong University of Science and Technology

  • Yingming Xie

    • Physics, Hong Kong University of Science and Technology
    • Hong Kong University of Science and Technology
    • Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China)

  • Cheng-Ping Zhang

    • Physics, Hong Kong University of Science and Technology
    • Hong Kong University of Science and Technology

  • Xi Dai

    • Physics, Hong Kong University of Science and Technology
    • Physics Department, Hong Kong University of Science and Technology
    • Physics, Hong Kong University of Science of Technology
    • Hong Kong University of Science and Technology
    • Physics, The Hong Kong University of Science and Technology

  • Kam Tuen Law

    • Physics, Hong Kong University of Science and Technology
    • Department of Physics, Hong Kong University of Science and Technology
    • Hong Kong University of Science and Technology
    • Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China)