Electrical control of neutral and charged excitons in few-layer InSe
ORAL
Abstract
Indium selenide(InSe), a layered metal chalcogenide semiconductor with a layer dependent band structure, high electron mobility and strong light-matter interaction, has gained considerable interests as a promising material system for optoelectronics applications. Monolayer InSe is predicted to be an indirect band gap material. However, few-layer InSe maintains direct band gap optical properties and enables electrostatic gating. Here we report the observation of the electrical field controlled neutral and charged excitons in high-quality hBN encapsulated few-layer InSe devices. Near the charge neutrality point, the photoluminescence (PL) spectra display a strong and narrow peak with 4meV linewidth (at 20K) associated with the recombination of neutral excitons. By adjusting the Fermi energy, we can tune the PL emission so that the PL spectra are dominated either by positively charged or negatively charged trions. We found relatively large trion binding energies of about 8meV, which further indicates the potential of few-layer InSe for optoelectronics.
*The work at NHMFL was supported by the NSF-DMR 1644779 and the State of Florida, and DoE-BES DE-FG02-07ER46451.
CNL and DS acknowledge the support from NSF-DMR 1807928.
L.B. acknowledges support from NSF-DMR 807969.
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Presenters
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Zhengguang Lu
- Natl High Magnetic Field Lab
- National High Magnetic Field Laboratory