Optical quantum emitters in monolayer MoS<sub>2</sub> fabricated with nm-precision by He ion microscopy

ORAL

Abstract

Atomistic defects in semiconductors can serve as single photon emitters for applications in quantum technologies. However, in conventional semiconductors, defects are often buried in the bulk hampering integration of defect centers into photonic circuits. Recently, it was demonstrated that color centers with narrow emsission are generated in single layer MoS2 by focused He-ion beam irradiation [1], opening a natural pathway for device integration.
Here, we investigate atomistic defects in MoS2 deliberately induced by focused He ion bombardment. We use scanning tunneling microscopy (STM) to resolve the atomistic defect states. By imaging line patterns with atomic resolution, we can quantify the lateral resolution of the defect patterning to be better than 7 nm.

[1] Klein et al. Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation, Nature Communications 10, 2755 (2019).

*We acknowledge funding by the German Excellence Strategy MCQST - EXC-2111–390814868 and e-conversion – EXC 2089/1 – 390776260, BaCaTeC and International Graduate School of Science and Engineering (IGSSE). Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

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Presenters

  • Christoph Kastl

    • Walter-Schottky-Institut, TU Munich

Authors

  • Elmar Mitterreiter

    • Walter-Schottky-Institut, TU Munich

  • Bruno Schuler

    • Molecular Foundry, Lawrence Berkeley National Laboratory

  • Alexander Weber-Bargioni

    • Lawrence Berkeley National Laboratory
    • Molecular Foundry, Lawrence Berkeley National Laboratory

  • Alexander Holleitner

    • Walter-Schottky-Institut, TU Munich

  • Christoph Kastl

    • Walter-Schottky-Institut, TU Munich