Hydrodynamic electron flow in 2D semiconductor heterostructures
ORAL
Abstract
We propose simple geometries to directly test hydrodynamic flow in 2D electron systems by longitudinal resistance measurements. We model the boundaries of the electron fluid as `slippery', i.e. supporting no longitudinal stress, hence, we show that the viscous component of resistance depends significantly on the geometric features while it vanishes along the straight featureless sections. Moreover, since the viscous resistance increases quadratically with the inverse scale of the system, we show that channels in which the viscous and Ohmic effects are comparable can be manufactured with current technology. Elementary, bent or nozzle/diffuser type channels show significant departure from their diffusive counterparts in the hydrodynamic regime.
*This research was supported by the Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (Project No. CE170100039) and funded by the Australian Government. This work was performed in part at the NSW Node of the Australian National Fabrication Facility.
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Presenters
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Aydin Keser
- University of New South Wales & FLEET ARC
- University of New South Wales, ARC FLEET
- School of Physics, University of New South Wales