Anomalous Hall Effect induced by extremely low field in ultra pure ZrTe<sub>5</sub>

ORAL

Abstract

ZrTe5 has gathered interest in recent years due to its non-trivial topology. In monolayer form, it is predicted to be a quantum spin hall insulator. In bulk, it is predicted to reside extremely close to a phase transition between a strong and weak topological insulator, with a 3D Dirac semimetal state at the boundary between these two phases. We report detailed measurements of the anomalous hall effect (AHE) in ultra-pure, high mobility bulk ZrTe5. We find the hall resistance saturates at an extremely low magnetic field ( B << 1T ), and remains at the saturation value for fields up to 32T. This AHE is present despite no evidence of magnetism in ZrTe5. We investigate the AHE effect in ZrTe5 as a function of temperature, magnetic field angle, strain, and doping, and discuss the origins of this effect.

*This work is supported as part of Programmable Quantum Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under award DE-SC0019443.

A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by the National Science Foundation Cooperative Agreement No. DMR-1644779, the State of Florida and the United States Department of Energy

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Presenters

  • Joshua Mutch

    • University of Washington

Authors

  • Joshua Mutch

    • University of Washington

  • Paul Malinowski

    • University of Washington

  • Qianni Jiang

    • University of Washington

  • Zhaoyu Liu

    • University of Washington

  • Di Xiao

    • Physics, Carnegie Mellon University
    • Carnegie Mellon University
    • Carnegie Mellon Univ
    • Department of Physics, Carnegie Mellon University

  • Jiun-Haw Chu

    • University of Washington
    • Department of Physics, University of Washington
    • Physics, University of Washington