Negative longitudinal magnetoresistance, anisotropic magnetoresistance, and planar Hall effect in epitaxial thin films of elemental Bismuth

ORAL

Abstract

Observations of negative longitudinal magnetoresistance (NLMR), anisotropic magnetoresistance (AMR), and the planar Hall effect (PHE) under an in-plane magnetic field are often used as indications of non-trivial topology in non-magnetic material systems. We show NLMR, AMR, and PHE in crystalline epitaxial thin films (< 50 nm) of elemental Bismuth (111) grown by molecular beam epitaxy on intrinsic GaAs (111) substrates. Films were characterized in-situ using scanning tunneling microscopy to confirm topography and density of states. Furthermore, the thickness and temperature dependence of these phenomena are investigated, demonstrating a high degree of tunability. We posit that these observations may be due to the Rashba effect in the surface states of Bi (111), rather than any non-trivial topological effects.

*All work at Argonne was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The use of facilities at the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Basic Energy Sciences under contract No. DEAC02-06CH11357. Work at the University of Illinois was supported by MRSEC Seed Grant number NSF DMR 17-20633 COOP ANTC.

–

Presenters

  • Eugene Ark

    • Materials Science Division, Argonne National Laboratory

Authors

  • Eugene Ark

    • Materials Science Division, Argonne National Laboratory

  • Deshun Hong

    • Materials Science Division, Argonne National Laboratory
    • Argonne National Laboratory
    • Argonne Natl Lab

  • Terence Bretz-Sullivan

    • Materials Science Division, Argonne National Laboratory
    • Argonne Natl Lab

  • Changjiang Liu

    • Materials Science Division, Argonne National Laboratory
    • Argonne National Laboratory
    • Argonne Natl Lab

  • Shulei Zhang

    • Materials Science Division, Argonne National Laboratory
    • Argonne National Laboratory
    • Materials Science Division, Argonne National Lab
    • Department of Physics, Case Western Reserve University

  • Leena Aggarwal

    • Physics, University of Illinois at Urbana-Champaign

  • Vidya Madhavan

    • Physics, University of Illinois at Urbana-Champaign
    • University of Illinois at Urbana-Champaign
    • Department of Physics, University of Illinois at Urbana-Champaign
    • Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois Urbana-Champaign

  • Anand Bhattacharya

    • Materials Science Division, Argonne National Laboratory
    • Argonne National Laboratory
    • Argonne Natl Lab