α-Sn, the diamond-cubic phase of tin, is of significant scientific interest due to its topological band structure and single-element nature. Consistent high-quality growth on insulating CdTe opens the doors to unconventional electronics using a widely available material. After verifying epitaxial growth of our films, we perform transport measurements to characterize the electronic carriers in the material. We identify two-channel transport and attribute the n-type transport to a semimetallic channel that tentatively suggests Dirac behavior, while the p-type component corresponds to growth impurities resulting from the CdTe substrate. We apply a field effect gate voltage in order to map out the charge neutrality point and modulate the channel between majority n-type and majority p-type carriers. Careful preparation of the CdTe surface before growth is considered crucial to attain a low dopant density and accessible topological states on an insulating substrate. This work readily lends itself to the development of topologically enabled devices for fieldable applications such as low power electronics in order to achieve a high level of computation at the edge.
*Office of the Under Secretary of Defense for Research and Engineering: Laboratory University Collaboration Initiative
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Presenters
Owen Vail
US Army Rsch Lab - Adelphi
Army Research Lab
Authors
Owen Vail
US Army Rsch Lab - Adelphi
Army Research Lab
Yu hao Chang
Materials Department, University of California, Santa Barbara
Materials, University of California, Santa Barbara
Sean Harrington
Materials Department, University of California, Santa Barbara
Dept. of Materials Engineering, Univ. of California, Santa Barbara, CA, USA
IEE, UC Santa Barbara
Univ of California, Santa Barbara
University of California, Santa Barbara
Patrick Aubrey Folkes
US Army Rsch Lab - Adelphi
Patrick Taylor
US Army Rsch Lab - Adelphi
US Army Research Laboratory
Army Research Lab
CCDC Adlphi Laboratory Center
barbara nichols
US Army Rsch Lab - Adelphi
George J De Coster
US Army Rsch Lab - Adelphi
Chris J Palmstrom
Materials Department, University of California, Santa Barbara
UCSB
Departments of Electrical and Computer Engineering and Materials, University of California, Santa Barbara
Dept. of Electrical Engineering, Univ. of California, Santa Barbara, CA, USA
Univ. of California, Santa Barbara
Electrical and Computer Engineering Department, University of California, Santa Barbara
University of California, Santa Barbara
IEE, UC Santa Barbara
University of California Santa Barbara
Univ of California, Santa Barbara
Electrical and Computer Engineering, University of California Santa Barbara
Materials and Electrical & Comp. Eng, University of California, Santa Barbara
