Growth of Conformal Thin Film Si Coatings on Terraced Substrates Using Subsequent Oblique Incidence Xe⁺ Ion Bombardment

Using a Si surface pre-patterned with a 500 nm pitch sinusoidal profile, it is demonstrated that ordered terraced topographies with sub-nanometer scale roughness on the facets develop under oblique incidence 1500 eV Xe⁺ broad beam ion bombardment. Bi-layers of SiO₂/Si were then deposited onto the terraced substrate using ion beam sputtering. Following the deposition of each Si layer, the oblique incidence Xe⁺ bombardment was repeated to restore the terraced structure. This work was performed in tandem with theory in an effort to refine models, showing agreement in selection of terraced slopes and the development of transverse roughness along the facets.