Photoluminescence study of non-polar m-plane InGaN and near strain-balanced AlGaN/InGaN superlattices

ORAL

Abstract

We present the first detailed study of the temperature-dependence of photoluminescence (PL) from m-plane bulk InxGa1-xN (x<0.25) layers and near strain-balanced AlGaN/InGaN superlattices grown by plasma-assisted molecular-beam epitaxy on free standing m-plane GaN substrates. The experimental PL peak positions were found to deviate from inter-band transition energies calculated using structural parameters obtained from high-resolution x-ray diffraction. The effect is stronger for superlattices than for bulk InGaN films. The temperature dependence of PL suggests the discrepancy is due to localization centers in InGaN. The low-temperature PL linewidths are narrower than some published results for both InxGa1-xN (x<0.1) and Al0.2Ga0.8N/In0.09Ga0.91N superlattices indicating lower alloy inhomogeneity than previously reported. We also observed the PL intensity drops dramatically as temperature increases. This suggests the presence of a high-density of non-radiative defects. We will describe our efforts to optimize growth conditions to increase PL efficiency and reduce PL linewidth at room temperature.

*TN, YC, and OM acknowledge partial support from NSF grant NSF-DMR 1610893. AS and BD were supported from NSF award ECCS-1607173.

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Presenters

  • Yang Cao

    • Physics and Astronomy, Purdue Univ

Authors

  • Yang Cao

    • Physics and Astronomy, Purdue Univ

  • Alexander Senichev

    • Physics and Astronomy, Purdue Univ

  • Brandon Dzuba

    • Physics and Astronomy, Purdue Univ

  • Trang Nguyen

    • Physics and Astronomy, Purdue Univ

  • Michael Manfra

    • Physics and Astronomy, Purdue Univ
    • Department of Physics and Astronomy and Station Q Purdue, Birck Nanotechnology Center, School of Materials Engineering, School of Electrical and Computer Engineering, Purdue
    • Purdue Univ
    • Purdue University
    • Microsoft Quantum at Station Q Purdue
    • Department of Physics and Astronomy, Birck Nanotechnology Center, Microsoft Quantum Purdue, School og Materials Engineering & School of Electrical and Computer Engineering, P
    • Physics and Astronomy, Purdue University
    • Department of Physics and Astronomy and Station Q Purdue, Purdue University
    • Department of Physics and Astronomy and Microsoft Quantum Purdue, Purdue University, West Lafayette, Indiana 47907 USA
    • Department of Physics and Astronomy, PURDUE UNIVERSITY
    • Department of Physics and Astronomy, Microsoft Quantum Purdue, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
    • Physics, Purdue University

  • Oana Malis

    • Physics and Astronomy, Purdue Univ