Imaging double moiré pattern in twisted bilayer graphene grown on hBN with microwave impedance microscopy

ORAL

Abstract

Stacking multiple atomic layers of similar crystal structure will create moiré patterns whose periodicity and orientation are determined by the stacked layers. In this study, we image the moiré patterns in CVD grown bilayer graphene/hBN heterostructures using microwave impedance microscopy and conductive atomic force microscopy. Two sets of moiré patterns are observed: one formed between the first graphene layer with hBN and a second one between the two twisted graphene layers. The graphene/hBN moiré pattern indicates a perfect alignment between the two layers. The graphene/graphene moiré pattern has a smaller period due to a larger twist angle. This moiré pattern experiences abrupt phase change across the boundaries of the graphene/hBN moiré pattern. We present our analysis of such double moiré pattern based on lattice reconstruction occurred in the graphene layers.

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Presenters

  • Xiong Huang

    • University of California, Riverside

Authors

  • Xiong Huang

    • University of California, Riverside

  • Lingxiu Chen

    • Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

  • Shujie Tang

    • Standford
    • Stanford University
    • Stanford Univeristy
    • Geballe Laboratory for Advanced Materials, Stanford University

  • Chengxin Jiang

    • Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

  • Chen Chen

    • Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

  • Huishan Wang

    • Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

  • Zhixun Shen

    • Standford
    • Stanford University
    • Stanford Univeristy
    • Applied Physics, Stanford University
    • SLAC National Accelerator Laboratory
    • Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University
    • Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA
    • Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
    • SIMES, SLAC - Natl Accelerator Lab
    • Stanford Univ

  • Haomin Wang

    • Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

  • Yongtao Cui

    • University of California, Riverside
    • University of California, Reverside