Nanoscale structure of the orbital magnetic moment of a single dopant spin in a semiconductor

ORAL

Abstract

The localized electron spin of a single impurity in a semiconductor is a promising system to realize quantum information schemes. In this work we investigate the orbital contribution to the magnetic moment originated from the spin-orbit induced circulating current [1] associated with the ground state of a single magnetic impurity in III-V semiconductors. In this project we developed a formalism employing Green's functions obtained by the Koster-Slater technique [2] with a sp3d5s* empirical tight-binding Hamiltonian [3] to describe the host material. We calculated the circulating current and orbital moments of a single Mn dopant in GaAs. The spin-correlated orbital moments originates from the hybridization between the Mn(d5) spin-polarized electrons and the As dangling bonds leading to t2-symmetric triplet acceptor states in the band-gap above the valence band edge.
[1] van Bree, J. and Silov, A.Yu and Koenraad, P.M. and Flatté, M. E., PRL 112, 187201 (2014).
[2] Tang, J.M. and Flatté, M.E., PRL. 92, 047201 (2004).
[3] Jancu, J.M. and Scholz, R. and Beltram, F. and Bassani, F., PRB 57, 6493 (1998).

*This project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No 721394

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Presenters

  • Adonai Rodrigues da Cruz

    • Applied Physics, Eindhoven University of Technology

Authors

  • Adonai Rodrigues da Cruz

    • Applied Physics, Eindhoven University of Technology

  • Michael Flatté

    • Optical Science and Technology Center and Department of Physics, The University of Iowa
    • Department of Physics and Astronomy, University of Iowa
    • University of Iowa
    • Univ of Iowa
    • University of Iowa, University of Chicago, and Eindhoven University of Technology
    • Physics and Astronomy, University of Iowa
    • Department of Physics and Astronomy, The University of Iowa