Local orbital degeneracy lifting as a precursor to an orbitalselective Peierls transition
ORAL
Abstract
Fundamental electronic principles underlying all transition metal compounds are the symmetry and filling of the d-electron orbitals and the influence of this filling on structural configurations and responses. Here we use a sensitive local structural technique, x-ray atomic pair distribution function analysis, to reveal the presence of fluctuating local-structural distortions at high temperature in one such compound, CuIr2S4. We show that this hitherto overlooked fluctuating symmetry-lowering is electronic in origin and will modify the energy-level spectrum and electronic and magnetic properties. The explanation is a local, fluctuating, orbital-degeneracy-lifted state. The natural extension of our result would be that this phenomenon is likely to be widespread amongst diverse classes of partially filled nominally degenerate d-electron systems, with potentially broad implications for our understanding of their properties.
*Work at Brookhaven National Laboratory was supported by US DOE, Office of Science, Office of Basic Energy Sciences under contract DE-SC0012704. Work in the Materials Science Division of Argonne National Laboratory, was sponsored by the U.S. Department of Energy Office of Science, Basic Energy Sciences, Materials Science and Engineering Division.
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Presenters
Emil Bozin
Brookhaven National Laboratory
Condensed Matter Physics and Materials Science, Brookhaven National Laboratory
Authors
Emil Bozin
Brookhaven National Laboratory
Condensed Matter Physics and Materials Science, Brookhaven National Laboratory
Weiguo Yin
Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory
Brookhaven National Laboratory
Robert Koch
Brookhaven National Laboratory
Condensed Matter Physics and Materials Science, Brookhaven National Laboratory
Milinda Abeykoon
Brookhaven National Laboratory
Brokhaven National Laboratory
Photon Science Division, Brookhaven National Laboratory
Yew San Hor
Argonne National Laboratory
Hong Zheng
Argonne National Laboratory
Argonne Natl Lab
Materials Science Division, Argonne National Laboratory
Material Science Division, Argonne National Lab
Hechang Lei
Brookhaven National Laboratory
Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China
Renmin University of China
Cedomir Petrovic
Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory
Brookhaven National Laboratory
Condensed Matter Physics and Materials Science, Brookhaven National Laboratory
Condensed Matter Physics & Materials Science Department, Brookhaven National Laboratory
Brookhaven National Laboratory, NY 11973, USA
John Mitchell
Argonne National Laboratory
Materials Science Division, Argonne National Laboratory
Argonne Natl Lab
Materials Science Division, Argonne National Lab
Material Science Division, Argonne National Lab
Simon J L Billinge
Brookhaven National Laboratory
Columbia University, Department of Applied Physics and Applied Mathematics
Department of Applied Physics and Applied Mathematics, Columbia University