Electrostatically gated quantum dots in van der Waals materials

Quantum confinement of electrons into quantum dots has been thoroughly explored in materials such as silicon or gallium arsenide showing interesting physical phenomena as well as promise for use in quantum technologies. With rapid advancement in the fabrication of van der Waals heterostructures and their devices, quantum confinement provides a route for harnessing the properties of 2D materials towards building novel quantum computing platforms. Working towards that goal, in this talk we present the design and fabrication of electrostatically gated quantum structures based on monolayer and few atomic layers of molybdenum disulfide (MoS₂) and bilayer graphene. Furthermore, we show and discuss our preliminary electron transport results aimed at probing the confined electron states in these structures.