Electronic structure of topological insulator Bi<sub>2</sub>Se<sub>3</sub> thin films on thulium iron garnet heterostructures
ORAL
Abstract
Breaking time-reversal symmetry (TRS) in topological insulator (TI) leads to exotic phenomena such as quantum anomalous Hall effect (QAHE). The novel phenomena originated from a gap opening at the Dirac surface state by exchange interaction with magnetic elements. Magnetically doped TI was first reported to exhibit such an exchange gap, but the observation temperature of QAHE was less than 2 K. Another way to break TRS is through interfacial magnetic proximity effect (MPE) in TI/ferromagnetic insulator bilayer with a strong ferromagnetism and uniform interfacial magnetization. In this work, TI films Bi2Se3 were grown by molecular beam epitaxy on ferromagnetic thulium iron garnet (TmIG) with perpendicular magnetic anisotropy and high TC above 500K. The band structures of 2-6 quintuple layer (QL) Bi2Se3/TmIG bilayers were investigated by angle-resolved photoemission spectroscopy. Comparative study in 2-6 QL Bi2Se3/sapphire was also performed. The energy gap opening at the surface state of Bi2Se3/TmIG is larger than that of Bi2Se3/sapphire by about 20 meV. The larger surface state gap of Bi2Se3/TmIG could be induced by MPE, on top of hybridization of top and bottom surfaces. Our study demonstrates the opportunity of probing interfacial band of TI-based heterostructures.
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Presenters
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Sheng-Wen Huang
- Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
- Natl Tsing Hua Univ
- Department of Physics, National Tsing Hua University
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan