Tuning the electronic properties of the 4d transition metal oxide LaRhO<sub>3</sub>

ORAL

Abstract

Perovskite transition metal oxides exhibit various novel properties due to strong correlations among their d electrons. These correlation effects are well known in the 3d transition metal oxides, such as LaCoO3, where multiple spin states can be observed. Electronic correlations are expected to change as the transition metal is changed from a 3d element to a 4d element in the same column of the periodic table, for example changing from Co to Rh. To explore these changes, we grow epitaxial La1-xSrxRhO3 thin films with Sr concentrations as large as 50% using molecular beam epitaxy. Hall measurements show a sign change from hole-like conduction for low doping to electron-like conduction for a large doping level of x=0.3. Systematic changes in electronic structure as a function of doping are predicted by theory and may provide a basis for understanding electronic correlations in transition metal oxides.

*This work is supported by a grant from the Department of Energy, Basic Energy Sciences under grant number DE-SC0019211.

Presenters

  • Juan Jiang

    • Yale University

Authors

  • Juan Jiang

    • Yale University
  • TaeKyun Lee

    • Yale University
  • Sangjae Lee

    • Yale University
  • Sohrab Ismail-Beigi

    • Yale University
  • Frederick J Walker

    • Yale University
    • Department of Applied Physics, Center for Research on Interface Structures and Phenomena, Yale University
  • Charles H Ahn

    • Yale University
    • Department of Applied Physics, Center for Research on Interface Structures and Phenomena, Yale University