Resistive switching and filament formation in VO<sub>2</sub> vertical devices
ORAL
Abstract
Vanadium oxides exhibit electrically-triggered, volatile, resistive switching and provide a promising opportunity to mimic spiking neurons for neuromorphic computing. The control of the physical properties of these oxides is an important requirement to develop oxide electronics for future technology. However, a detailed understanding of the non-volatile filamentary formation in these Mott materials is still lacking. In this work, we investigated the mechanisms behind volatile and non-volatile resistive switching in electrically-driven VO2 vertical devices. By using electrical transport measurement and in-situ transmission electron microscopy, the metal-insulator transition properties of the conductive filament and its nanoscale lattice structure are studied. Our works address the important issues in resistive switching based neuromorphic technologies.
*Work supported by the Quantum Materials for Energy-Efficient Neuromorphic Computing (Q-MEEN-C) Energy Frontier Research Center (EFRC), funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award DE-SC0019273.
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Presenters
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Minhan Lee
- Materials Science and Engineering, University of California-San Diego