Nonlinear planar Hall effect

ORAL

Abstract

An intriguing property of a three-dimensional topological insulator (TI) is the existence of surface states with spin-momentum locking. We report the discovery of a new type of Hall effect in a TI Bi2Se3 film [1]. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall and anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry-breaking, which also exists in other non-centrosymmetric materials [e.g., WTe2 and the 2DEG on the SrTiO3(001) surface] with a large span of magnitude.

[1] P. He et al., Phys. Rev. Lett., 123, 016801(2019).

*P. H, D. Z, S. S, and H. Y. was partially supported by the A*STAR’s Pharos Programme; work by S.Z. and G.V. at the Univ. of Missouri on initial development the theoretical framework was supported by NSF; work by S. Z. and O. H. at Argonne Nat’l Lab on further theoretical development and data analysis was supported by DOE, Office of Science, BES, Material Sciences and Engineering Division.

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Presenters

  • Shulei Zhang

    • Materials Science Division, Argonne National Laboratory
    • Argonne National Laboratory
    • Materials Science Division, Argonne National Lab
    • Department of Physics, Case Western Reserve University

Authors

  • Pan He

    • Department of Electrical and Computer Engineering, National University of Singapore
    • Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Shulei Zhang

    • Materials Science Division, Argonne National Laboratory
    • Argonne National Laboratory
    • Materials Science Division, Argonne National Lab
    • Department of Physics, Case Western Reserve University

  • Dapeng Zhu

    • Department of Electrical and Computer Engineering, National University of Singapore
    • Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Shuyuan Shi

    • Department of Electrical and Computer Engineering, National University of Singapore
    • Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Olle Heinonen

    • Materials Science Division, Argonne National Lab
    • Argonne National Laboratory
    • Materials Science Division, Argonne National Laboratory
    • Argonne Natl Lab

  • Giovanni Vignale

    • Department of Physics and Astronomy, University of Missouri
    • Department of Physics and Astronomy, Univ of Missouri - Columbia
    • Univ of Missouri - Columbia

  • Hyunsoo Yang

    • Department of Electrical and Computer Engineering, National University of Singapore
    • Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore
    • National University of Singapore