Nonlinear Hall effect in topological insulator-ferromagnet heterostructures
ORAL
Abstract
Topological insulators (TIs) are a new class of materials which have insulating bulk bands and gapless helical surface states. The unique spin-momentum locking property leads to large charge-to-spin conversion efficiency which can be used to manipulate the magnetization in an adjacent ferromagnetic layer via spin-orbit torques (SOTs). However, more rich phenomena can happen in topological insulator/ferromagnet bilayers. Here, we report current-nonlinear Hall effect in Bi2Se3/CoFeB heterostructures measured by second harmonic Hall voltage method, which is commonly used to extract SOTs in TI/FM bilayers. By field dependence analysis and magneto-optical Kerr effect spin-orbit torque measurement, the origin of the second harmonic Hall voltage is mainly attributed to asymmetric magnon scattering mechanism. We further show that the second harmonic Hall resistance might be linked to quantum interference effect in TIs.
*This work is supported by the U.S. DOE, Office of Basic Energy Sciences, under contract number DE-SC0016380.
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Presenters
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Yang Wang
- University of Delaware
- Physics and Astronomy, University of Delaware