Site-controlled generation of tin-vacancy centers in diamond via shallow ion implantation and subsequent diamond growth
ORAL
Abstract
Color centers in diamond have garnered much interest in recent years as potential solid-state spin qubits. Paramount to implementing these color centers in scalable photonic systems is the development of techniques to generate high-quality, site-controlled emitters. This challenge is amplified for color centers with larger group-IV impurity atoms, which have emerged as otherwise promising emitters due to predictions of long spin coherence times without a dilution refrigerator. In the case of the tin-vacancy (SnV-) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. In this talk we present a novel method to generate site-controlled SnV- centers with clean, consistent bulk spectra. We shallowly implant Sn ions and subsequently grow a layer of diamond via chemical vapor deposition. This method is compatible with nanophotonic device fabrication and can be extended to other color centers.
*ARO (W911NF-13-1-0309);
NSF RAISE (1838976);
AFOSR DURIP (FA9550-16-1-0223);
National Defense Science and Engineering Graduate Fellowship;
Stanford Graduate Fellowship;
Microsoft Research PhD Fellowship;
Division of Materials Science, Office of Basic Energy Sciences, Department of Energy;
SLAC LDRD
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Presenters
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Alison E Rugar
- Stanford University