Probing the Coherent Spin Dynamics of Divacancies in Silicon Carbide with Spin Correlated Low-Field Magnetoresistance

Silicon carbide has attracted attention in the quantum information community due to remarkably long room temperature spin coherence times [1] and the potential for integration with the photonics and communications sectors due to divacancy energies in the near-infrared regime [2]. Isolated neutral divacancies are realizable and addressable via optically detected magnetic resonance [3]. The long coherence times of these individual deep centers suggest that they are ideal candidates for single spin sensing and quantum memory applications. We describe an approach we predict will allow exploration of the coherent spin dynamics of these divacancies through low-field magnetoresistance by addressing an individual divacancy with a spin-polarized scanning tunneling microscope (SP-STM) [4]. Measurement of the spin coherence time should be feasible and signatures of the local hyperfine interactions and single-spin exchange interactions should be resolvable.
[1] A. L. Falk, et al., Nat. Commun. 4:1819 (2013)
[2] N. T. Son, et al. Phys. Rev. Lett., 96, 055501 (2006)
[3] D. J. Christle, et al., Nature Materials 14, 160 (2015)
[4] S. R. McMillan, et al., arXiv:1907.05509 [cond-mat.mes-hall]