Controlling the Silicon Vacancy in Silicon Carbide via Electric and Magnetic Fields

The Silicon Vacancy in Silicon Carbide is an optically-active, spin-3/2 defect with a long spin coherence and potential for integration into large-scale nanophotonic circuits due to its narrow, stable optical transitions and small inhomogenous broadening. We demonstrate the optical transitions of the Silicon Vacancy are widely tunable via electric fields, which may enable multi-emitter scalability. We perform magnetic-field spectroscopy on single defects, and discuss the cavity-assisted spin-initialization protocols enabled by its fine structure.