Tailoring of interlayer hopping integral at K valley in transition metal dichalcogenides
ORAL
Abstract
Interlayer electronic coupling plays a critical role in developing novel electronic metamaterials such as unconventional superconductivity in graphene and moiré excitons in transition metal dichalcogenides (TMDs), in which the potential landscape is determined by the interlayer hopping integral. In addition to the well-known effects of stacking configuration, a largely unexplored factor is the van der Waals (vdW) gap, which impacts the hopping integral exponentially. Here, by measuring the direct optical transitions, we quantitatively determine the interlayer hopping integral of K valley as ~40 meV in Bernal-stacked MoS2. The vdW-gap dependence was further investigated by tuning the temperature and hydrostatic pressure. We observed a 2.4-fold enhancement at a reduced vdW gap of ~7%. The experimental results were compared with the density functional theory. Our work has shed light on designing the TMD-based moiré heterostructures in the future.
*This research was supported by the Welch Foundation (F-1672), the US Airforce (FA2386-18-1-4097), and the US National Science Foundation (DMR-1808751 and the MRSEC program DMR-1720595).
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Presenters
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Wei-Ting Hsu
- Department of Physics, The University of Texas at Austin
- University of Texas at Austin