The role of He and H on the structural evolution of He- and H-irradiated 6H-SiC

ORAL

Abstract

The behavior of irradiated H and He ions in the 6H-SiC lattice was rather different. H irradiated with low fluence at RT, blisters were formed after annealing at 1100°C, while at high irradiation fluence no blister cavities were observed due to the formation of an amorphous layer. At an irradiation temperature of 450 and 900°C, amorphization of 6H-SiC did not occur and hydrogen-containing microcracks grew laterally below the surface. Thus blisters appeared on the surface of the samples irradiated at 900°C even without annealing. For He irradiation, regardless of the fluence and irradiation temperature, blisters did not form. The presented results are well supported by density functional theory calculations. The coalescence between two small bubbles is an exothermic process when the H2-bubbles contain an unpaired hydrogen and endothermic process when the H2-bubbles contain paired H atoms, but it is energetically cheap. On the other hand, activation of the coalescence of He bubbles is endothermic and energetically very expensive.

*This study was supported by the project 17-17921S, projects CZ.02.1.01/0.0/0.0/15_003/0000485 and CZ.02.1.01/0.0/0.0/16-019/0000778) and China (Grant No.11475229, U1832133, 11622545, U1732268, 61874128, 61851406, 2017YFE0131300). LM2015070”. 113072

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Presenters

  • Nabil Daghbouj

    • Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague

Authors

  • Nabil Daghbouj

    • Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague

  • bingsheng Li

    • state key laboratory, university of science and technology china

  • Mauro Callisti

    • materials science and mettalurgy, University of cambridge

  • Huseyin Sener sen

    • Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague

  • Miroslav Karlik

    • Depatement of materials, Faculty of Nuclear sciences and Physical engineering

  • Jie Lin

    • state key laboratory of Functionnal materials for informatics, Shanghai Institute of microsystem and information technology

  • Xin OU

    • state key laboratory of Functionnal materials for informatics, Shanghai Institute of microsystem and information technology

  • Tomas Polcar

    • Advanced Materials Group, CVUT
    • Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague
    • Control Engineering, Czech Technical University in Prague
    • Engineering Materials & nCATS, FEE, University of Southampton, United Kingdom
    • Engineering Materials, University of Southampton
    • Department of Control Engineering, Czech Technical University in Prague