Proton radiation-induced enhancement of conductivity of composite amorphous/nanocrystalline silicon thin films

ORAL

Abstract

While most semiconductor devices are susceptible to radiation damage, we report here observations of an enhancement of the conductivity of undoped composite hydrogenated amorphous silicon thin films containing silicon nanocrystalline inclusions (a/nc-Si:H) following irradiation with high-energy protons. A series of films with varying nc content, synthesized in a unique dual-chamber co-deposition system, were irradiated with 16 MeV protons from a superconducting linear accelerator for fluences ranging from 2 x 10^13 cm^-2 to 10^15 cm^-2. For the highest irradiation doses, the dark conductivity is enhanced by over an order of magnitude. Unlike the persistent photoconductivity effect observed in amorphous semiconductors, the radiation-induced enhancement is permanent and is not removed by annealing, remaining unchanged at least eight months after irradiation. Various mechanisms are tested to explain the irradiation-induced conductivity enhancement, but none are found to be able to fully account for our observations.

*This work was partially supported by NSF grants PHYS-1344251 and DMR-1608937, the NINN Characterization Facility, the Minnesota Nano Center and, the University of Minnesota.

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Presenters

  • Lis Stolik Valor

    • School of Physics and Astronomy, University of Minnesota

Authors

  • Zvie Razieli

    • School of Physics and Astronomy, University of Minnesota

  • Nathan Bosch

    • School of Physics and Astronomy, University of Minnesota

  • Lagy T Baby

    • Department of Physics, Florida State University

  • Lis Stolik Valor

    • School of Physics and Astronomy, University of Minnesota

  • Rachel Yohay

    • Department of Physics, Florida State University

  • Roger W Rusack

    • School of Physics and Astronomy, University of Minnesota

  • James Kakalios

    • University of Minnesota
    • School of Physics and Astronomy, University of Minnesota