Quantum transport in a dual-gated antiferromagnetic topological insulator
ORAL
Abstract
Magnetic topological insulator provides an exciting arena to investigate the interplay between magnetism and spin-momentum-locked Dirac surface state [1]. The recent discovery of the intrinsic antiferromagnetic topological insulators, MnBi2Te4, MnBi4Te7, and MnBi6Te10 has enabled us to study the quantum anomalous Hall effect and axion insulator in exfoliated crystals [2,3]. Especially interesting is the electric-field effect on the crystals due to the expected finite topological magnetoelectric effect. We here report the quantum transport properties of dual-gated antiferromagnetic topological insulator devices, which allow the independent control of the carrier density and the electric field.
[1] Y. Tokura, K. Yasuda, A. Tsukazaki, Nat. Rev. Phys. 1, 126–143 (2019) [2] Y. Deng et al., arXiv 1904.11468 [3] C. Liu et al., arXiv 1905.00715
[1] Y. Tokura, K. Yasuda, A. Tsukazaki, Nat. Rev. Phys. 1, 126–143 (2019) [2] Y. Deng et al., arXiv 1904.11468 [3] C. Liu et al., arXiv 1905.00715
*This work was partially supported as part of the Center for the Advancement of Topological Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science.
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Presenters
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Kenji Yasuda
- Massachusetts Institute of Technology MIT
- Univ of Tokyo