Full configuration interaction simulations of exchange coupled donors in silicon in an effective mass theory framework
ORAL
Abstract
Several proposals for multi-qubit gates with donor spin qubit in silicon rely on the exchange interaction, using either weak exchange and microwave pulses [1], or strong tunable exchange [2]. Designing the optimal devices to embody these control strategies requires accurate models of the dependence of the exchange interaction on lattice placement, orientations, and electric fields. Here, we use a full configuration interaction method within an established multivalley effective mass theory framework [3] to model the two-electron wavefunction for different donor configurations. In particular, we investigate the exchange interaction and valley population along different lattice orientations, and the tunability of exchange with external electric fields.
[1] R. Kalra et al., Phys. Rev. X 4, 021044 (2014)
[2] Y. He et al., Nature 571, 371 (2019)
[3] J.K. Gamble et al., Phys. Rev. B 91, 235318 (2015)
[1] R. Kalra et al., Phys. Rev. X 4, 021044 (2014)
[2] Y. He et al., Nature 571, 371 (2019)
[3] J.K. Gamble et al., Phys. Rev. B 91, 235318 (2015)
*Funded by the Australian Research Council (CE170100012) and the US Army Research Office (W911NF-17-1-0200). Sandia National Laboratories is a multi-missions laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for DOE’s National Nuclear Security Administrationunder contract DE-NA0003525.
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Presenters
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Benjamin Joecker
- Center for Quantum Computation and Communication Technology, University of New South Wales
- UNSW Sydney