Towards quantum criticality in Al/InAs Kondo systems
ORAL
Abstract
Hybrid metal-semiconductor two-dimensional systems are an attractive platform for exploring correlated electron-electron interactions. Flexible nanopatterning allows design of structures to emulate particular Hamiltonians with electrostatically tunable parameters. Pierre et al. recently demonstrated a quantum phase transition based on a charge Kondo effect[1]. Based in a GaAs heterostructure, the metal was an annealed ohmic contact, requiring much effort to obtain a highly-transparent interface even for a few-micron metal island. InAs may offer significant advantages: pinning of the surface Fermi level in the conduction band allows for direct electrical contact to metals. For example, in-situ epitaxy of aluminum on InAs has resulted in pristine interfaces, leveraged to probe topological superconductivity[2]. Small metallic islands with large charging energies may allow building on earlier charge Kondo work without requiring as low electron temperatures. I will present our initial efforts towards realizing charge Kondo devices on InAs 2DEGs tuned into the quantum Hall regime, with edge states controlled by lithographically defined QPCs.
[1] Z. Iftikhar, et al. Nature 526, 233–236 (2015)
[2] A. Fornieri, et al. Nature 569, 89–92 (2019)
[1] Z. Iftikhar, et al. Nature 526, 233–236 (2015)
[2] A. Fornieri, et al. Nature 569, 89–92 (2019)
*Supported by US DoE, contract DE-AC02-76SF00515
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Presenters
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Praveen Sriram
- Department of Applied Physics, Stanford University