Pb-doped p-type Bi<sub>2</sub>Se<sub>3</sub> thin films via interfacial engineering
ORAL
Abstract
Due to high density of native defects, the prototypical topological insulator, Bi2Se3, is naturally n-type. Although Bi2Se3 can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have been so far effective as the compensation dopant. Considering that strong spin-orbit coupling (SOC) is essential for the topological surface states, a light element is undesirable as a dopant, because it weakens the strength of SOC. In this sense, Pb, which is the heaviest 2+ ion, located right next to Bi in the periodic table, is the most ideal p-type dopant for Bi2Se3. However, Pb-doping has so far failed to achieve p-type Bi2Se3 not only in thin films but also in bulk crystals. Here, by utilizing an interface engineering scheme, we have achieved the first Pb-doped p-type Bi2Se3 thin films. Furthermore, at heavy Pb-doping, the mobility turns out to be substantially higher than that of Ca-doped samples, indicating that Pb is a less disruptive dopant than Ca.
*This work was supported by the Gordon and Betty Moore Foundation’s EPiQS Initiative (GBMF4418) and National Science Foundation (NSF) grant EFMA-1542798.
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Presenters
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Jisoo Moon
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey
- Rutgers University, New Brunswick
- Department of Physics & Astronomy, Rutgers, The State University of New Jersey