High mobility in a layered antiferromagnet

2D, or ultrathin, magnetic materials are being studied as a new paradigm for device design. Intrinsic magnetic order in atomically thin layered materials has been confirmed only recently. Thus far magnetic 2D materials are mostly insulating or semiconducting; none possesses high electronic mobility. A material that exhibits simultaneously magnetic order and high mobility would enhance development of high-speed spintronic devices. In this talk, I will show how we can use chemcial rules to design a materils that can combine high mobility and magnetism and also crysaltiilizes in a strucutre with a vand der Waald gap. I will introduce the LnTe3 family as such highly conducting antiferromagnetic layered materials. In bulk GdTe3, the mobility reaches more than 60,000 cm2/Vs, [3] which is the highest mobility yet recorded for layered magnetic (ferro or antiferro) materials, and is comparable to non-magnetic, high-mobility materials such as black phosphorous. I will also show GdTe3 can be mechanically exfoliated to the monolayer limit, which will allow future investiagtion of the proeties in the 2D limit as well as open avenues for future device design.


[3] arXiv:1903.03111