Growth and electrical transport properties of (110) YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> / (110) PrBa<sub>2</sub>(Cu<sub>0.8</sub>Ga<sub>0.2</sub>)<sub>3</sub>O<sub>7 </sub>heterostructure
ORAL
Abstract
We performed pulsed laser-based thin film deposition and study of electrical transport properties on (110)-oriented YBa2Cu3O7 (YBCO)/ (110)-oriented PrBa2(Cu0.8Ga0.2)3O7 heterostructure for the nanofabrication of Superconductor (S) / Insulator (I) / Superconductor (S) tunneling Josephson junction device which may have many advantages over the conventional low-temperature superconductor-based Josephson junction devices including low cost, cryogenic system simplicity, and high IcRn product (with Ic being the junction critical current and Rn the normal resistance). X-ray diffraction pattern (XRD) analysis, atomic force microscopy (AFM), and electrical transport studies were carried out to check the orientation, thickness, roughness, surface morphology, critical temperature (TC), and electrical resistivities of the heterostructures. Here, we report the optimization process for the layer by layer growth, multi-layer epitaxy, thickness control of the superconductor and insulator layers, and the electrical transport properties of the (110) YBa2Cu3O7 / (110) PrBa2(Cu0.8Ga0.2)3O7 heterostructure.
*This research was supported by WiSys and UW System Applied Research Grant (ARG 2019-2020).
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Presenters
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Hom Kandel
- Physics, University of Wisconsin-Parkside