Theory of spin-orbit mediated hole spin-photon coupling in lateral Ge/SiGe quantum dots
ORAL
Abstract
Coupling semiconductor spin qubits to microwave photons enables long-range quantum information transfer, and strong spin-photon coupling has recently been demonstrated for electron spin qubits in silicon [1, 2]. In this context, hole spin qubits in lateral Ge/SiGe quantum dots [3, 4] represent an attractive alternative platform without valley degeneracy and with strong intrinsic spin-orbit interaction. We present an analytical formulation of heavy hole spin-photon coupling mediated by spin-orbit interaction in lateral Ge/SiGe quantum dots. Using this formalism, we derive expressions for effective single-photon and three-photon coupling within this system and explore the strengths of these interactions in experimentally relevant parameter regimes.
[1] X. Mi et al., Nature 555, 599 EP (2018).
[2] N. Samkharadze et al., Science 359, 1123 (2018).
[3] W. J. Hardy et al., Nanotechnology 30, 215202 (2019).
[4] A. Hofmann et al., arXiv:1910.05841 (2019).
[1] X. Mi et al., Nature 555, 599 EP (2018).
[2] N. Samkharadze et al., Science 359, 1123 (2018).
[3] W. J. Hardy et al., Nanotechnology 30, 215202 (2019).
[4] A. Hofmann et al., arXiv:1910.05841 (2019).
*Sandia National Labs is managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a subsidiary of Honeywell International, Inc., for the U.S. Dept. of Energy’s NNSA under contract DE-NA0003525. The views expressed above do not necessarily represent the views of the DOE or the U.S. Government.
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Presenters
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Vanita Srinivasa
- Center for Computing Research, Sandia National Laboratories