Machine learned defect and impurity levels in perovskite halides and CdTe

ORAL

Abstract

Electronic levels introduced by impurities and intrinsic defects in the band gap of semiconductors affect optoelectronic performance. Predictions of these defect levels are possible, but expensive, using first principles density functional theory (DFT), and chemical trends are often not easily available. In this talk, we will describe using machine learning (ML) trained on DFT data for defect levels in hybrid perovskite halides [1] and CdTe [2] photovoltaic materials. Relevant descriptors, relative performance of different ML approaches, and insight from resultant ML models will be discussed.

[1] A. Mannodi-Kanakkithodi, et. al., “Comprehensive Computational Study of Partial Lead Substitution in Methylammonium Lead Bromide,” Chemistry of Materials 31, 3599 (2019).
[2] A. Mannodi-Kanakkithodi, et. al., “Machine-learned impurity level prediction for semiconductors: the example of Cd-based chalcogenides,” arXiv:1906.02244.

*We acknowledge funding from the USDOE: SunShot program under Contract No. DE-EE-005956; Argonne National Laboratory LDRD program and the Center for Nanoscale Materials under Contract No. DE-AC02-06CH11357; computational resources of the National Energy Research Scientific Computing Center under Contract No. DE-AC02-05CH11231.

Presenters

  • Arun Kumar Mannodi Kanakkithodi

    • Argonne Natl Lab

Authors

  • Arun Kumar Mannodi Kanakkithodi

    • Argonne Natl Lab
  • Fatih G Sen

    • Argonne Natl Lab
  • Michael Toriyama

    • Argonne Natl Lab
    • Northwestern University
  • Michael J Davis

    • Argonne Natl Lab
  • Maria Chan

    • Argonne Natl Lab
    • Center for Nanoscale Materials, Argonne National Laboratory