Noise-resilient driven exchange gate for quantum dot spin qubits

ORAL

Abstract

Spin qubits in silicon quantum dots are a promising candidate for high-fidelity quantum computation due to long decoherence times and fast operations.

Demonstrations of single qubit gates with fidelities up to 99.9% have been shown [1,2].
Recent demonstrations of two-qubit gates show fidelities of 92-98% [2,3]. These two-qubit gate implementations are not robust against low-frequency charge noise, which couples in via the exchange interaction, causing a limited fidelity. We propose a simple yet effective scheme that is resilient against low-frequency charge noise. We use a combination of analytic calculations and numerical simulations under realistic conditions to obtain estimated gate fidelities greater than 99%, which allow for fault-tolerant two qubit gates. We directly compare these realizations with existing proposals and will present our experimental efforts towards achieving this goal.


[1] Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)
[2] Huang et al., Nature (London) 569, 532 (2019)
[3] Xu et al., Phys. Rev. X 9, 021011 (2019)

*We acknowledge financial support from the Marie Sklodowska-Curie actions—Nanoscale solidstate spin systems in emerging quantum technologies—Spin-NANO, grant agreement number 676108 and from the European Research Council (ERC-Synergy).

Presenters

  • Stephan Philips

    • Delft University of Technology

Authors

  • Stephan Philips

    • Delft University of Technology
  • Maximilian Russ

    • Delft University of Technology
  • Lieven M Vandersypen

    • QuTech and Kavli Institute of Nanoscience, TU Delft, The Netherlands
    • QuTech and Kavli Institute of Nanoscience
    • QuTech and Kavli Institute of Nanoscience, Delft University of Technology
    • Delft University of Technology
    • Delft University of Technology, Delft, The Netherlands