Superconductivity in Sn<sub>1-x</sub>In<sub>x</sub>Te thin films grown by molecular beam epitaxy

ORAL

Abstract

Sn1-xInxTe is derived from the topological crystalline insulator SnTe which becomes superconducting when doped with Indium and it is one of the top candidates for topological superconductivity [1].

Sn1-xInxTe films have been grown by molecular beam epitaxy on a Bi2Te3 buffer layer, which has a good lattice matching for the growth in the (111) direction [2]. Using in situ post-annealing procedures, we achieve robust superconductivity. To look for possible signatures of topological superconductivity, we fabricated tunnel junctions on the surface of the Sn1-xInxTe films. The tunnelling spectroscopy data shows a two-gap structure in the conductance spectra which points to the coexistence of bulk and surface superconductivity in the studied films.

[1] S. Sasaki et al., Phys. Rev. Lett. 109, 217004 (2012)
[2] A.A. Taskin et al., Phys. Rev. B 89, 121302(R) (2014)

*This project has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant Agreement No. 741121), the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under CRC 1238-277146847 (Subprojects A04, B01) as well as Germany’s Excellence Strategy–Cluster of Excellence Matter and Light for Quantum Computing (ML4Q) EXC 2004/1-390534769.

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Presenters

  • Andrea Bliesener

    • Institute of Physics II, University of Cologne

Authors

  • Andrea Bliesener

    • Institute of Physics II, University of Cologne

  • Junya Feng

    • Institute of Physics II, University of Cologne

  • Alexey A Taskin

    • Osaka University
    • Institute of Physics II, University of Cologne

  • Yoichi Ando

    • Univ. Cologne
    • University of Cologne
    • Osaka University
    • Institute of Physics II, University of Cologne