Designing and probing electronic structures of a scalable transition metal dichalcogenide heterostructure: MoS₂monolayers on MoSe₂multilayers.

The emergence of van der Waals (vdW) 2D electronic materials and their heterostructures, especially the semiconducting family of transition metal dichalcogenides (TMD), has opened a new frontier of science and technology. Although interesting novel devices have been created using these 2D electronic materials and heterostructure, they are created only as discrete single devices. Namely, they are not scalable. A scalable material platform must satisfy the following conditions: (a) the ability to create single continuous layer of a continuous area of the same orientation, (b) the ability to stack dissimilar semiconducting layers to form wafer size heterostructures that are laterally homogeneous. Here we report successful development of a wafer size monolayer, quasi continuous and single orientation (but containing twins) platform of TMD that can be exfoliated and transferred to create wafer size TMD semiconducting heterostructures (in this case, monolayer MoS₂ on multilayer MoSe₂) with atomically clean interface. We use angle resolved photoemission to probe the electronic structure of such heterostructure and their respective constituents, revealing evidence of strong hybridization near the zone center.