Intel Quantum Dot Devices: temperature dependence of electrical characteristics and correlating noise measurements for improved measurement turn-around

Quantum computing promises to tackle exciting and computationally difficult problems. Intel is leveraging 50 years of experience in semiconductor manufacturing to develop silicon-based spin qubits. One of the key challenges is the measurement bottleneck: Data acquisition at low temperatures (10 mK) is slow, and only few samples can be characterized per cooldown. Nonetheless, these measurements provide the ultimate feedback to device fabrication and design. At Intel, this problem is highlighted to the extreme: every week, thousands of SiMOS quantum dot devices are fabricated on 300 mm wafers, yet only a small fraction of these can be measured at mK temperatures. The need for low-temperature electrical characterization can be reduced by understanding the temperature dependence of device data, enabling learning from measurements at elevated temperatures. Furthermore, correlations between directly relevant quantities (such as quantum dot charge noise) and device properties which are measured more quickly (such as pinch-off noise) are investigated. These quick-turn monitors enable faster feedback to improve fab and pave the way to automated wafer-scale characterization of quantum dot devices at intermediate temperatures (2-4 K); this will help alleviate the measurement bottleneck.