Enhancement of critical current density in a superconducting NbSe<sub>2</sub> step junction

POSTER

Abstract

We investigate the transport properties of a NbSe2 nanodevice consisting of a thin region, a thick region and a step junction. We find the critical current density has similar values for both the thin and thick regions away from the junction, while the critical current density of the thin region of the junction increases to approximately 1.8 times as compared with the values obtained for the other regions. We attribute such an enhancement of critical current density to the strong vortex pinning at the surface step.

Presenters

  • Xin He

    • King Abdullah Univ of Sci & Tech (KAUST)

Authors

  • Xin He

    • King Abdullah Univ of Sci & Tech (KAUST)

  • Yan Wen

    • King Abdullah Univ of Sci & Tech (KAUST)

  • Chenhui Zhang

    • King Abdullah University of Science and Technology
    • King Abdullah Univ of Sci & Tech (KAUST)

  • Zhiping Lai

    • King Abdullah Univ of Sci & Tech (KAUST)

  • Eugene M Chudnovsky

    • Physics Department, Lehman College and Graduate School
    • CUNY-Lehman Coll
    • Physics, Herbert H. Lehman College

  • Xixiang Zhang

    • King Abdullah University of Science and Technology
    • King Abdullah Univ of Sci & Tech (KAUST)