Magnetic and Electronic Materials towards Realization of a FET based on Spin-Orbit Torques
POSTER
Abstract
The spin-orbit torque field effect transistor (SOTFET) is a recently proposed device that combines the spin-orbit-torque mechanism for writing magnetic memories with semiconductor transistors that are ubiquitous in logic. The SOTFET utilizes a magnetoelectric multiferroic to couple a SOT-controlled ferromagnet to the semiconducting channel. Therefore, this magnetic device may access the orders-of-magnitude on/off ratio of transistors, giving it the potential to combine memory and logic. It’s realization, however, relies on the delicate interplay between topological insulating, ferro/ferrimagnetic, multiferroic, and semiconducting materials. In this talk, we discuss the material parameters and candidates that show promise for integration into a SOTFET and give an overview of the material advances towards realizing the device.
*The research was partially supported by the National Science Foundation under Grant Nos. E2CDA 1740286 and NewLAW EFRI 1741694 and partially supported by the Semiconductor Research Corporation as nCORE task 2758. P.D.’s support by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1650441 is acknowledged.
Presenters
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Phillip Dang
- Cornell University