Temperature influence in the broadening parameter of photoreflectance spectras on GaAs doped with Ge and Sn as aged samples

POSTER

Abstract

Aged samples of GaAs doped with Ge and Sn growth by liquid phase epitaxy, show temperature influence in the broadening parameter of the photoreflectance spectras domined mainly by the photon-defects interactions. The samples were characterized via Raman spectroscopy, X-ray diffraction technique and scanning electron microscopy. The photoreflectance spectras were taken by varying temperatures from 20 to 300 K. Optical measurements suggest that increase temperature and increases broadening parameter, exhibiting changes in the photon-defects interactions, possibly attributed to increase in aging defects.

**We would like to thank the Interdisciplinary Institute of Sciences, Doctoral Program in Physical Sciences and EITP at Universidad del Quindío and the Universidad de la Guajira for the financial support.

Presenters

  • Samuel Zambrano

    • University of Magdalena, University of Guajira

Authors

  • Samuel Zambrano

    • University of Magdalena, University of Guajira

  • Gerardo Fonthal

    • Doctoral Program in Physical Sciences, University of Quindio

  • Jose Sierra

    • University of Magdalena

  • John Prias

    • Optoelectronics, Universidad del Quindío
    • Doctoral Program in Physical Sciences, IIS and EITP, University of Quindio
    • Doctoral Program in Physical Sciences, University of Quindio
    • Doctoral Program in Physical Sciences, Interdisciplinary Institute of Sciences, University of Quindio
    • Physical Sciences Doctoral Program, Interdisciplinary Institute of Sciences, University of Quindio