Electrostatically control interfacial states for stackable electronics
POSTER
Abstract
Semiconducting monolayer of transition metal dichalcogenides (TMD) is ideal fundamental unit for stackable electronics because of its excellent optoelectronic properties. However, further applications are hindered with various issues from trap states of the monolayers. Here we develop a method to effectively engineer trap states of the monolayer MoS2 for excellent optoelectronic performances, including ultrahigh photoresponsivity (R) of 102~104 A/W, high sensitivity (D*) of 1011~1012 Jones and large absorbance. A scalable image sensor array of CVD-grown MoS2 monolayer is demonstrated.
*AOARD grant (co-funded with ONRG) FA2386-16-1-4009
Presenters
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Chen Po-Han
- National Tsing-Hua University
- Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- National Taiwan Normal Univ