Epitaxial growth and interface band alignment studies of all oxide α-Cr<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3 </sub>p-n heterojunction
POSTER
Abstract
Epitaxial growth of α-Cr2O3(p-type) on c-Al2O3 and β-Ga2O3 (n-type) on α-Cr2O3(p-type) has been carried out to make an all oxide epitaxial n-type β-Ga2O3/p-type α-Cr2O3 heterojunction using RF sputtering. A valence band offset of 3.38 ± 0.2 eV at the heterojunction is determined using Kraut’s method. From the bandgap measurements of α-Cr2O3 and β-Ga2O3, the conduction band offset of 1.68 ± 0.2 eV at the heterojunction is obtained. Thus, the band alignment at this heterojunction is found to be staggered (Type-II), which leads to the confinement of electrons and holes in the β-Ga2O3 layer and α-Cr2O3 layer, respectively. Our results provide a pathway to design all oxide optoelectronic devices based on a p-n heterojunction consisting of n-type β-Ga2O3 and p-type α-Cr2O3.
*The authors are thankful to HBNI, RRCAT for financial support during the course of the work.
Presenters
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Sahadeb Ghosh
- Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore and HBNI, Mumbai