Defects in Gallium Oxide and Nitride
FOCUS · G63 · ID: 354965
Presentations
-
Defect Spectroscopy of Ga2O3
Invited
–
Presenters
-
Steven Ringel
- Ohio State Univ - Columbus
Authors
-
Steven Ringel
- Ohio State Univ - Columbus
-
Aaron Arehart
- Ohio State Univ - Columbus
-
Hemant Ghadi
- Ohio State Univ - Columbus
-
Joseph McGlone
- Ohio State Univ - Columbus
-
Esmat Farzana
- Ohio State Univ - Columbus
-
James S Speck
- University of California, Santa Barbara
-
Akhil Mauze
- University of California, Santa Barbara
-
Siddharth Rajan
- Ohio State Univ - Columbus
-
Nidhin Kalarickal
- Ohio State Univ - Columbus
-
Zhanbo Xia
- Ohio State Univ - Columbus
-
-
Ab initio studies on segregation of n-type dopants and vacancies near beta-Ga2O3(010) surface
ORAL
–
Presenters
-
Jingyang Wang
- Materials Science and Engineering, Stanford University
Authors
-
Jingyang Wang
- Materials Science and Engineering, Stanford University
-
Paulette Clancy
- Chemical and Biomolecular Engineering, Johns Hopkins University
-
-
Electronic properties of the Ga<sub>2</sub>O<sub>3</sub>-Fe<sub>2</sub>O<sub>3</sub> system
ORAL
–
Presenters
-
Shoaib Khalid
- Department of Physics and Astronomy, University of Delaware
Authors
-
Shoaib Khalid
- Department of Physics and Astronomy, University of Delaware
-
Fernando Sabino
- Department of Materials Science & Engineering, University of Delaware
- Department of Material Science and Engineering, University of Delaware
-
Anderson Janotti
- Materials Science and Engineering, University of Delaware
- Department of Materials Science and Engineering, University of Delaware
- University of Delaware
- Department of Materials Science & Engineering, University of Delaware
- Department of Material Science and Engineering, University of Delaware
- Univ of Delaware
-
-
Unusual Formation of Point Defects and Their Complexes in Ultra-wide Band Gap Beta-Ga2O3
ORAL
–
Presenters
-
Jinwoo Hwang
- Ohio State Univ - Columbus
- Center for Electron Microscopy and Analysis, The Ohio State University
- The Ohio State University
Authors
-
Jared Johnson
- Ohio State Univ - Columbus
-
Zhen Chen
- Applied and Engineering Physics, Cornell University
- Cornell University
- School of Applied and Engineering Physics, Cornell University
-
Joel Varley
- Lawrence Livermore Natl Lab
- Lawrence Livermore National Laboratory
-
Christine Jackson
- Ohio State Univ - Columbus
-
Esmat Farzana
- Ohio State Univ - Columbus
-
Aaron Arehart
- Ohio State Univ - Columbus
-
Hsien-Lien Huang
- Ohio State Univ - Columbus
-
Steven Ringel
- Ohio State Univ - Columbus
-
Chris Van de Walle
- University of California, Santa Barbara
-
David Muller
- Cornell University
- School of Applied and Engineering Physics, Cornell University
- Applied and Engineering Physics, Cornell University
-
Jinwoo Hwang
- Ohio State Univ - Columbus
- Center for Electron Microscopy and Analysis, The Ohio State University
- The Ohio State University
-
-
Donor and acceptor properties in Ga<sub>2</sub>O<sub>3</sub> polymorphs
ORAL
–
Presenters
-
John Lyons
- Center for Computational Materials Science, United States Naval Research Laboratory
- Center for Computational Materials Science, US Naval Research Laboratory
Authors
-
John Lyons
- Center for Computational Materials Science, United States Naval Research Laboratory
- Center for Computational Materials Science, US Naval Research Laboratory
-
Darshana Wickramaratne
- United States Naval Research Laboratory
- Center for Computational Materials Science, United States Naval Research Laboratory
-
Joel Varley
- Lawrence Livermore Natl Lab
- Lawrence Livermore National Laboratory
-
-
Optical Properties of Acceptor Impurities in Ga<sub>2</sub>O<sub>3</sub>
ORAL
–
Presenters
-
Intuon Chatratin
- Department of Materials Science & Engineering, University of Delaware
Authors
-
Intuon Chatratin
- Department of Materials Science & Engineering, University of Delaware
-
Fernando Sabino
- Department of Materials Science & Engineering, University of Delaware
- Department of Material Science and Engineering, University of Delaware
-
Pakpoom Reunchan
- Department of Physics, Kasetsart University
-
Anderson Janotti
- Materials Science and Engineering, University of Delaware
- Department of Materials Science and Engineering, University of Delaware
- University of Delaware
- Department of Materials Science & Engineering, University of Delaware
- Department of Material Science and Engineering, University of Delaware
- Univ of Delaware
-
-
Transition levels for impurities in β-Ga<sub>2</sub>O<sub>3</sub>
ORAL
–
Presenters
-
Suman Bhandari
- Univ of Alabama - Birmingham
Authors
-
Suman Bhandari
- Univ of Alabama - Birmingham
-
Mary Zvanut
- Univ of Alabama - Birmingham
-
-
Bismuth-alloyed Ga<sub>2</sub>O<sub>3</sub> as a novel p-type transparent conducting oxide
ORAL
–
Presenters
-
Xuefen Cai
- University of Delaware
Authors
-
Xuefen Cai
- University of Delaware
-
Fernando P. Sabino
- University of Delaware
-
Anderson Janotti
- Materials Science and Engineering, University of Delaware
- Department of Materials Science and Engineering, University of Delaware
- University of Delaware
- Department of Materials Science & Engineering, University of Delaware
- Department of Material Science and Engineering, University of Delaware
- Univ of Delaware
-
Suhuai Wei
- Beijing Computational Science Research Center
- Beijing Computational Science Res Ctr
-
-
Direct Imaging on Strain Relaxation of MBE-grown Single Phase alpha-(Al,Ga)<sub>2</sub>O<sub>3</sub> on m-sapphire Substrate in Atomic Resolution Using Scanning Transmission Electron Microscopy
ORAL
–
Presenters
-
Celesta Chang
- Cornell University
- Department of Physics, Cornell University
Authors
-
Celesta Chang
- Cornell University
- Department of Physics, Cornell University
-
Riena Jinno
- Electrical and Computer Engineering, Cornell University
-
Debdeep Jena
- School of Electrical and Computer Engineering, Cornell University
- Cornell University
- Electrical and Computer Engineering, Cornell University
-
Huili Grace Xing
- Cornell University
- Electrical and Computer Engineering, Cornell University
-
David Anthony Muller
- Cornell University
- School of Applied and Engineering Physics, Cornell University
- Applied and Engineering Physics, Cornell University
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
-
-
Ultrafast Optical Measurement of Defect Dynamics in β-Ga<sub>2</sub>O<sub>3 </sub>using Supercontinuum Pump-Probe Spectroscopy.
ORAL
–
Presenters
-
Arjan Singh
- Cornell University
Authors
-
Arjan Singh
- Cornell University
-
Okan Koksal
- Cornell University
-
Nicholas Tanen
- Cornell University
-
Debdeep Jena
- Cornell University
-
Huili Xing
- Cornell University
-
Farhan Rana
- Cornell University
-
-
X-ray diffraction studies of GaN p-i-n structures for high power electronics
ORAL
–
Presenters
-
Alexandra Zimmerman
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
Authors
-
Alexandra Zimmerman
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
-
Jiaheng He
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
-
GuanJie Cheng
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
-
Davide Del Gaudio
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
-
Jordan Occena
- Materials Science and Engineering, University of Michigan
-
Fabian Naab
- Michigan Ion Beam Laboratory, University of Michigan
-
Mohsen Nami
- Department of Electrical Engineering, Yale University
-
Bingjun Li
- Department of Electrical Engineering, Yale University
-
Jung Han
- Department of Electrical Engineering, Yale University
-
Rachel Goldman
- Univ of Michigan - Ann Arbor
- Physics and Materials Science and Engineering, University of Michigan
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
- Materials Science Engineering, University of Michigan
-
-
Influence of interfacial defects on the electronic states at GaN p-i-n diode interfaces
ORAL
–
Presenters
-
GuanJie Cheng
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
Authors
-
GuanJie Cheng
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
-
Jiaheng He
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
-
Alexandra Zimmerman
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
-
Davide Del Gaudio
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
-
Fabian Naab
- Michigan Ion Beam Laboratory, University of Michigan
-
Mohsen Nami
- Department of Electrical Engineering, Yale University
-
Bingjun Li
- Department of Electrical Engineering, Yale University
-
Jung Han
- Department of Electrical Engineering, Yale University
-
Rachel Goldman
- Univ of Michigan - Ann Arbor
- Physics and Materials Science and Engineering, University of Michigan
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
- Materials Science Engineering, University of Michigan
-
-
Study of carbon-related point defects in C-doped GaN using photo-induced electron paramagnetic resonance spectroscopy
ORAL
–
Presenters
-
Subash Paudel
- Univ of Alabama - Birmingham
Authors
-
Subash Paudel
- Univ of Alabama - Birmingham
-
Mary Zvanut
- Univ of Alabama - Birmingham
-
Michal Bockowski
- Institute for High Pressure Physics, Police Academy of Sciences
-