Temperature dependent resistivity in hole-doped Ba<sub>1−x</sub>K<sub>x</sub>Fe<sub>2</sub>As<sub>2</sub> subject to electron irradiation

ORAL

Abstract

Temperature dependence of in-plane and inter-plane electrical resistivity was studied in single crystals of hole doped iron based superconductor Ba1−xKxFe2As2 (0≤x≤1). Low temperature (20 K) irradiation with relativistic 2.5 MeV electrons was used to control residual resistivity of the samples. Matthiessen rule is found to be universally violated for all compositions and for both current flow directions. This is in stark contrast with electron doped Ba(Fe1−xCox)2As2 [1] and iso-electron substituted BaFe2(As1−xPx)2 [2].
Possible reasons for Matthiessen rule violation are discussed.

[1] R. Prozorov, et al. NPJ Quantum Materials, 4, 34 (2019).
[2] Yuta Mizukami, et al. J. Phys. Soc. Jpn. 86, 083706 (2017).

*This work was supported by the US DOE, Office of Science, BES Materials Science and Engineering Division under contract # DE-AC02-07CH11358.

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Presenters

  • Makariy Tanatar

    • Ames laboratory, Ames, IA
    • Ames Lab

Authors

  • Makariy Tanatar

    • Ames laboratory, Ames, IA
    • Ames Lab

  • Yong Liu

    • Ames Laboratory, Iowa State University
    • Ames Lab

  • T. A. Lograsso

    • Ames Lab

  • Ruslan Prozorov

    • Ames Lab
    • Ames laboratory, Ames, IA
    • Ames Laboratory
    • Ames Laboratory and Iowa state University, Ames, USA
    • Iowa State University/Ames Laboratory

  • Marcin Konczykowski

    • Ecole Polytechnique
    • Ecole Polytechnique, Palaiseau, France
    • Laboratoire des Solides Irradies, Ecole Polytechnique
    • LSI, Ecole Polytechnique
    • Laboratoire des solides irradiées, L'École Polytechnique

  • Olivie Cavani

    • LSI, Ecole Polytechnique