Magnetothermoelectricity of topological semiconductor ZrTe<sub>5 </sub>

ORAL

Abstract

We report a comprehensive study of electric, thermoelectric, thermodynamic measurements and angle resolved photoemission spectroscopy (ARPES) of the topological insulator candidate ZrTe5. The single crystals grown by a chemical vapor transport method exhibit transport properties characterized by the electronic band structure with a small band gap that is observed by ARPES. The thermoelectricity has a significant response to magnetic field exceeding 300%, for which we discuss the mechanism along with the unique properties of bands deduced from the fermiology.

–

Presenters

  • Junbo Zhu

    • Massachusetts Institute of Technology MIT

Authors

  • Junbo Zhu

    • Massachusetts Institute of Technology MIT

  • Changmin Lee

    • Massachusetts Institute of Technology MIT
    • Lawrence Berkeley National Laboratory

  • Takehito Suzuki

    • Department of Physics, Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology
    • Massachusetts Institute of Technology MIT
    • Physics, MIT

  • Shiang Fang

    • Harvard University
    • Department of Physics and Astronomy, Rutgers University
    • Harvard
    • Department of Physics, Harvard University
    • Physics, Harvard University

  • Nuh Gedik

    • Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology
    • Physics, MIT

  • Joseph G Checkelsky

    • Department of Physics, Massachusetts Institute of Technology
    • Department of Physics, Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology
    • Massachusetts Institute of Technology MIT
    • Physics, MIT